InGaAs/InGaAlAs MQW lasers with InGaAsP guiding layers grown by gas source molecular beam epitaxy

Author

Kawamura, Y. ; Wakatsuki, A. ; Noguchi ; Iwamura, H.

Author_Institution

NTT Opto-Electron. Lab., Kanagawa, Japan

Volume

3

Issue

11

fYear

1991

Firstpage

960

Lastpage

962

Abstract

An InGaAs/InGaAlAs multiple-quantum-well (MQW) laser was grown by gas source molecular beam epitaxy (GS-MBE). The laser has InP cladding layers and InGaAsP guiding layers, and the active layer is composed of an InGaAs/InGaAlAs MQW layer. Electrons are injected into the MQW active layer by tunneling through the barriers. The threshold current of the InGaAs/InAlAs buried-heterostructure (BH)-MQW lasers was as low as 9.6 mA. The relaxation oscillation frequency of the InGaAs/InAlAs MQW lasers was found to be larger than that of the InGaAs/InGaAsP MQW lasers with the same structure.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor junction lasers; 9.6 mA; InGaAs-InGaAlAs; InGaAsP guiding layers; InP cladding layers; MQW lasers; active layer; buried-heterostructure; diode lasers; electron injection; gas source molecular beam epitaxy; multiple-quantum-well; relaxation oscillation frequency; semiconductor growth; semiconductors; threshold current; tunneling; Electrons; Frequency; Gas lasers; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Quantum well devices; Threshold current; Tunneling;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.97826

Filename

97826