Title :
ZnSTeSe metal-semiconductor-metal photodetectors
Author :
Chang, S.J. ; Su, Y.K. ; Chen, W.R. ; Chen, J.F. ; Lan, W.H. ; Lin, W.J. ; Cherng, Y.T. ; Liu, C.H. ; Liaw, U.H.
Author_Institution :
Inst. of Microelectron., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
High-quality quaternary ZnSTeSe epitaxial layers were successfully grown by molecular beam epitaxy (MBE). It was found that a ZnS/sub 0.18/Se/sub 0.82/ layer was automatically formed in between the ZnSe buffer layer, and the ZnS/sub 0.17/Te/sub 0.08/Se/sub 0.75/ epitaxial layer, when we increased the ZnS cell temperature. ZnSTeSe metal-semiconductor-metal (MSM) photodetectors were also fabricated for the first time. It was found that we could achieve a photocurrent to dark current contrast higher than five orders of magnitude by applying a 10-V reverse bias. We also found that the maximum photoresponsivity is about 0.4 A/W under a 10-V reverse bias. Such a value suggests that the ZnSTeSe MSM photodetector is potentially useful in the blue-UV spectral region.
Keywords :
II-VI semiconductors; metal-semiconductor-metal structures; molecular beam epitaxial growth; photodetectors; semiconductor growth; ultraviolet detectors; zinc compounds; I-V characteristics; MSM photodetectors; RHEED; X-ray diffraction; ZnSTeSe; blue-UV spectral region; increased cell temperature; maximum photoresponsivity; molecular beam epitaxy; photocurrent to dark current contrast; quaternary epitaxial layers; reverse bias; rocking curve; Epitaxial layers; Gallium arsenide; Molecular beam epitaxial growth; P-i-n diodes; Photodetectors; Photodiodes; Photonic band gap; Substrates; Tellurium; Zinc compounds;
Journal_Title :
Photonics Technology Letters, IEEE
