DocumentCode
1559685
Title
Impact ionisation coefficients of In0.53Ga0.47As
Author
Ng, J.S. ; David, J.P.R. ; Rees, G.J. ; Pinches, S.M. ; Hill, G.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, UK
Volume
148
Issue
56
fYear
2001
Firstpage
225
Lastpage
228
Abstract
Ionisation coefficients were measured in a series of In0.53 Ga0.47As p-i-n diodes with i-region thicknesses ranging from 1.82 μm to 4.60 μm. Pure electron injection and pure hole-like mixed injection measurements were made on the same p-i-n diodes to improve accuracy. Despite its narrow bandgap In0.53Ga0.47As is found to have a very similar breakdown voltage to that of GaAs. The measured ionisation coefficients are used to assess the feasibility of a homojunction In0.53Ga 0.47As avalanche photodiode. Calculations suggest that such a device would need a very thick multiplication layer and high operating voltage to produce useful multiplication before tunnelling becomes significant
Keywords
III-V semiconductors; gallium arsenide; impact ionisation; indium compounds; p-i-n photodiodes; 1.82 to 4.60 micron; In0.53Ga0.47As; In0.53Ga0.47As avalanche photodiode; In0.53Ga0.47As p-i-n diodes; breakdown voltage; high operating voltage; homojunction avalanche photodiode; impact ionisation coefficients; measured ionisation coefficients; narrow bandgap; p-i-n diodes; pure electron injection measurements; pure hole-like mixed injection measurements; tunnelling;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings -
Publisher
iet
ISSN
1350-2433
Type
jour
DOI
10.1049/ip-opt:20010700
Filename
980745
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