High breakdown characteristic δ-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer HEMT

Author

Chen, Yen-Wei ; Hsu, Wei-Chou ; Shieh, Her-Ming ; Chen, Yeong-Jia ; Lin, Yu-Shyan ; Li, Yih-Juan ; Wang, Tzong-Bin

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

49

Issue

2

fYear

2002

fDate

2/1/2002 12:00:00 AM

Firstpage

221

Lastpage

225

Abstract

A novel δ-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer high-electron mobility transistor (TRST-HEMT) has been successfully fabricated by low-pressure metal organic chemical vapor deposition (LP-MOCVD). Three-terminal N-shaped negative differential resistance (NDR) phenomenon due to the hot electrons real-space transfer (RST) at high electric field is observed. Two-terminal gate-to-drain breakdown voltage is more than 40 V with a leakage current as low as 0.27 mA/mm. High three-terminal on-state breakdown voltage as high as 19.2 V and broad plateau of current valley as high as 15 V are achieved. These characteristics are attributed to the use of high Schottky barrier height, high bandgap of InGaP Schottky layer, δ-doping, and GaAs subspacer layers. The measured maximum peak-to-valley ratio (PVR) value is 2.7

Keywords

III-V semiconductors; MOCVD; Schottky barriers; gallium arsenide; high electron mobility transistors; high field effects; hot carriers; indium compounds; negative resistance; resonant tunnelling transistors; semiconductor device breakdown; InGaP-InGaAs-AlGaAs; Schottky barrier height; Schottky layer high bandgap; conduction-band diagrams; delta-doped HEMT; high breakdown characteristic; high electric field; hot electrons real-space transfer; low-pressure MOCVD; negative differential resistance phenomenon; negative transconductance; three-terminal on-state breakdown voltage; tunneling real-space transfer HEMT; two-terminal gate-to-drain breakdown voltage; Chemical vapor deposition; Electric breakdown; Electric resistance; Electrons; HEMTs; Indium gallium arsenide; Leakage current; MODFETs; Organic chemicals; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.981210

Filename

981210