DocumentCode
1559740
Title
A study of soft and hard breakdown - Part II: Principles of area, thickness, and voltage scaling
Author
Alam, Muhammad Ashraful ; Weir, Bonnie E. ; Silverman, Paul J.
Author_Institution
Agere Syst., Murray Hill, NJ, USA
Volume
49
Issue
2
fYear
2002
fDate
2/1/2002 12:00:00 AM
Firstpage
239
Lastpage
246
Abstract
For Part I see ibid., vol.49, no.2, pp.232-8 (2002). Based on the theory of soft and hard breakdown established in Part I of this paper, we now study the principles of area, thickness, voltage, and circuit configuration dependence of hard and soft breakdown. These scaling principles allow us to conclude that breakdown in ultrathin oxides stressed at operating voltages (1.0-1.5 V) can never be hard, which should allow a more relaxed reliability specification for these oxides
Keywords
electric breakdown; 1.0 to 1.5 V; area scaling; circuit configuration; hard breakdown; reliability; soft breakdown; thickness scaling; ultrathin oxide; voltage scaling; Breakdown voltage; Capacitors; Circuits; Electric breakdown; Equations; MOS devices; Power dissipation; Semiconductor device breakdown; Semiconductor device reliability; Stress;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.981213
Filename
981213
Link To Document