Flicker noise in gate overlapped polycrystalline silicon thin-film transistors

Author

Rahal, Mouhamed ; Lee, Mike ; Burdett, Alison Payne

Author_Institution

Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK

Volume

49

Issue

2

fYear

2002

fDate

2/1/2002 12:00:00 AM

Firstpage

319

Lastpage

323

Abstract

A study of the noise performance of gate overlapped polycrystalline silicon thin-film transistors (TFTs) is presented. Low-frequency noise measurements were carried out on n- and p-type samples fabricated by excimer laser crystallization. It is shown that the carrier number fluctuation model applies not only to n-type but also to p-type devices. The density of oxide traps was extracted from the noise measurements and was of the order of 10¹⁸-10¹⁹ eV^-1 cm^-3

Keywords

1/f noise; electron traps; electronic density of states; elemental semiconductors; flicker noise; hole traps; liquid crystal displays; semiconductor device measurement; semiconductor device noise; silicon; thin film transistors; AMLCD; Si; active matrix liquid crystal display; carrier number fluctuation model; excimer laser crystallization; flicker noise; gate overlapped lightly doped drain TFT; gate overlapped polycrystalline silicon TFTs; gate overlapped polycrystalline silicon thin-film transistors; low-frequency noise measurements; n-type devices; n-type samples; noise measurements; noise performance; oxide trap density; p-type devices; p-type samples; 1f noise; Crystallization; Fluctuations; Laser modes; Laser noise; Low-frequency noise; Noise measurement; Semiconductor thin films; Silicon; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.981224

Filename

981224