Transparent and quasi-transparent regional solutions to minority-carrier transport in arbitrarily doped semiconductors

The exact analytical regional solution to minority-carrier transport is derived in arbitrarily doped transparent semiconductor regions. By using this solution, new regional quasi-transparent solutions for emitter light-generated current density are derived in both the Cuevas and Balbuena approach (Cuevas and Balbuena, IEEE Trans. Electron Devices, vol. 36, pp. 553-560, 1989) and the Hamel approach (Hamel, IEEE Trans. Electron Devices, vol. 46, pp. 104-109, 1996) . Either of the new third-order quasi-transparent expressions is shown to be more accurate than both the local second-order quasi-transparent expression of Cuevas and Balbuena and the third-order regional expression of Bisschop et al (IEEE Trans. Electron Devices, vol. 37, pp. 358-364, 1990). In particular, while the new expression derived according to Hamel is more accurate at passivated surfaces, the new expression derived according to Cuevas and Balbuena is always more accurate, except for the case of a negligible surface recombination, where it is as accurate as the third-order regional expression of Bisschop et al