Linear cofactor difference method of MOSFET subthreshold characteristics for extracting interface traps induced by gate oxide stress test

Author

He, Jin ; Zhang, Xing ; Huang, Ru ; Wang, Yangyuan

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

Volume

49

Issue

2

fYear

2002

fDate

2/1/2002 12:00:00 AM

Firstpage

331

Lastpage

334

Abstract

A new subthreshold analysis technique, the linear cofactor difference method, is presented in this brief for extraction of the MOSFET interface traps induced by the gate oxide stress test. This technique relies on new linear cofactor difference extreme spectral characteristics of MOSFET gate voltage in the subthreshold region. It is shown that this method enables reliable extraction of the increased interface traps with a rise of the accumulated gate oxide stress test time to be obtained and that its validity is also verified by the extraction experiments on an n-channel MOSFET (nMOST) device

Keywords

MOSFET; dielectric thin films; electric fields; electron traps; hole traps; interface states; semiconductor device models; semiconductor device testing; MOSFET gate voltage; MOSFET interface traps; MOSFET subthreshold characteristics; SiO₂-Si; accumulated gate oxide stress test time; electrical stress effect; gate oxide stress test; gate oxide stress test induced interface traps; interface traps extraction; linear cofactor difference extreme spectral characteristics; linear cofactor difference method; n-channel MOSFET; nMOST; subthreshold analysis technique; subthreshold region; Capacitance measurement; Capacitance-voltage characteristics; Helium; MOS capacitors; MOS devices; MOSFET circuits; Microelectronics; Stress; Testing; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.981227

Filename

981227