Title :
Large-area lateral p-i-n photodiode on SOI
Author :
Zimmermann, H. ; Müller, B. ; Hammer, A. ; Herzog, K. ; Seegebrecht, P.
Author_Institution :
Inst. for Electr. Meas. & Circuit Design, Technische Univ. Wien, Vienna, Austria
fDate :
2/1/2002 12:00:00 AM
Abstract :
Results of a large-area, low-capacitance lateral p-i-n photodiode in silicon-on-insulator (SOI) are presented. This photodiode possesses an antireflection coating optimized for blue light and is therefore appropriate for scintillation detector applications. An average external quantum efficiency of 78.6% and 68.4% is achieved for λ=430 nm and 400 nm, respectively. The rise and fall times of the lateral p-i-n photodiode for light with a wavelength of 400 nm are 9.7 ns and 11.2 ns, respectively. The capacitance of the SOI p-i-n photodiode is 0.72 pF/mm 2. This photodiode combines a high quantum efficiency and a low capacitance with a high speed
Keywords :
antireflection coatings; capacitance; p-i-n photodiodes; semiconductor device measurement; silicon-on-insulator; solid scintillation detectors; 11.2 ns; 400 nm; 430 nm; 68.4 percent; 78.6 percent; 9.7 ns; SOI; SOI p-i-n photodiode; Si-SiO2; average external quantum efficiency; blue light optimized antireflection coating; capacitance; large-area lateral p-i-n photodiode; lateral p-i-n photodiode; lateral photodiodes; light wavelength; low-capacitance lateral p-i-n photodiode; p-i-n photodiodes; photodiode; quantum efficiency; rise/fall times; scintillation detector applications; scintillation detectors; silicon-on-insulator; Dark current; Doping; Fingers; Low-noise amplifiers; PIN photodiodes; Quantum capacitance; Scintillation counters; Semiconductor device noise; Silicon on insulator technology; Solid scintillation detectors;
Journal_Title :
Electron Devices, IEEE Transactions on
