GaN-based high electron-mobility transistors for microwave and RF control applications

Author

Drozdovski, Nikolai V. ; Caverly, Robert H.

Author_Institution

Dept. of Electr. & Comput. Eng., Villanova Univ., PA, USA

Volume

50

Issue

1

fYear

2002

fDate

1/1/2002 12:00:00 AM

Firstpage

4

Lastpage

8

Abstract

Heterojunction FETs or high electron-mobility transistors (HEMTs) based on Al_xGa_1-xN/GaN are studied for their use as control components for high-power microwave and RF control devices (switches, phase-shifters, etc.). A linear operation model was developed for these components so that optimum transistor geometry and operation parameters may be determined for their use in control applications. The model was verified with experimental data taken on test HEMT devices. It was experimentally established that the HEMT resistance is low for voltages of +1.0 V, and that the capacitive reactance increases for de gate voltages below the threshold voltage of approximately -1.5 V

Keywords

III-V semiconductors; aluminium compounds; equivalent circuits; gallium compounds; microwave field effect transistors; microwave phase shifters; microwave power transistors; microwave switches; power HEMT; semiconductor device models; wide band gap semiconductors; -1.5 V; 1.0 V; Al_xGa_1-xN-GaN; Al_xGa_1-xN/GaN HEMTs; HEMT resistance; RF control; capacitive reactance; control components; dc gate voltages; heterojunction FETs; high electron-mobility transistors; high-power microwave control devices; linear operation model; microwave control; optimum operation parameters; optimum transistor geometry; phase-shifters; small-signal equivalent circuit; switches; threshold voltage; FETs; Gallium nitride; HEMTs; Heterojunctions; MODFETs; Microwave devices; Radio frequency; Solid modeling; Switches; Threshold voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.981235

Filename

981235