The silicon radio decade

Author

Sevenhans, Jan ; Eynde, Frank Op´t ; Reusens, Peter

Author_Institution

Alcatel Bell, Antwerp, Belgium

Volume

50

Issue

1

fYear

2002

fDate

1/1/2002 12:00:00 AM

Firstpage

235

Lastpage

244

Abstract

During the 1990s, we witnessed a string of advances in silicon RF integration: from the introduction of the first integrated silicon bipolar radios for groupe special mobile (GSM) and digital European cordless telephone in the late 1980s toward full single-chip integration capabilities based on silicon-germanium BiCMOS technologies. Where RF design used to be a black art, it is becoming a "normal practice" today. In this paper, the authors look back on the past ten years of circuits, silicon technology, and system research with roots in standardization and a scope reaching from the early ideas to the final product success on the market and some perspective toward new concepts and systems

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; UHF integrated circuits; elemental semiconductors; integrated circuit design; integrated circuit technology; radio equipment; silicon; BiCMOS technologies; RF ASICs; RF CMOS; RF design; RFIC; Si; Si technology; SiGe; SiGe technology; circuit interfaces; integrated inductors; radio front-end ICs; receiver topology; spiral inductors; standardization; system research; transceiver architectures; transmitter topology; Atomic layer deposition; CMOS technology; Circuits; Gallium arsenide; Germanium silicon alloys; Paper technology; Radio frequency; Silicon germanium; Telephony; Transceivers;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.981276

Filename

981276