0.25-μm BiCMOS receivers for normal and micro GSM900 and DCS 1800 base stations

Author

Gould, Penny ; Lin, Jenshan ; Boric-Lubecke, Olga ; Zelley, Christopher ; Chen, Yung-Jinn ; Yan, Ran-Hong

Author_Institution

Lucent Technol. Bell Labs., Swindon, UK

Volume

50

Issue

1

fYear

2002

fDate

1/1/2002 12:00:00 AM

Firstpage

369

Lastpage

376

Abstract

This paper describes two integrated RF receivers with low noise and high linearity for GSM900 and DCS1800 base stations. The chips were fabricated using a 0.25-μm BiCMOS process. This is the first silicon-integrated radio front-end that can be used to meet GSM normal and micro base-station specifications reported to date. Noise figure, gain, and output third-order intercept point are 2.1 dB, 25.8 dB, and 25.7 dBm for GSM900 and 3.3 dB, 21.3 dB, and 22.5 dBm for DCS1800, respectively

Keywords

BiCMOS integrated circuits; UHF integrated circuits; cellular radio; elemental semiconductors; integrated circuit noise; microcellular radio; radio receivers; silicon; 0.25 micron; 2.1 dB; 21.3 dB; 25.8 dB; 3.3 dB; BiCMOS process; DCS1800 base stations; GSM micro base-station specifications; GSM normal base-station specifications; GSM900 base stations; Si integrated radio front-end; high linearity; integrated RF receivers; low noise; Base stations; BiCMOS integrated circuits; GSM; Integrated circuit technology; Noise measurement; Optical receivers; Radio frequency; Radiofrequency integrated circuits; Silicon; Telephone sets;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.981288

Filename

981288