Title :
Positive flatband voltage shift in MOS capacitors on n-type GaN
Author :
Matocha, K. ; Chow, T.P. ; Gutmann, R.J.
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
GaN MOS capacitors were fabricated using silicon dioxide deposited by low-pressure chemical vapor deposition oxide at 900/spl deg/C. The MOS capacitor flatband voltage shift versus temperature was used to determine a pyroelectric charge coefficient of 3.7 /spl times/ 10/sup 9/ q/cm/sup 2/-K, corresponding to a pyroelectric voltage coefficient of 7.0 /spl times/ 10/sup 4/ V/m-K.
Keywords :
CVD coatings; III-V semiconductors; MOS capacitors; gallium compounds; pyroelectric devices; silicon compounds; wide band gap semiconductors; 900 C; MOS capacitor; flatband voltage shift; low-pressure chemical vapor deposition; n-type GaN; pyroelectric charge coefficient; pyroelectric voltage coefficient; silicon dioxide; Electrons; Gallium nitride; Inorganic materials; MOCVD; MOS capacitors; Photonic band gap; Piezoelectric polarization; Pyroelectricity; Temperature; Voltage;
Journal_Title :
Electron Device Letters, IEEE
