• DocumentCode
    1559839
  • Title

    Positive flatband voltage shift in MOS capacitors on n-type GaN

  • Author

    Matocha, K. ; Chow, T.P. ; Gutmann, R.J.

  • Author_Institution
    Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
  • Volume
    23
  • Issue
    2
  • fYear
    2002
  • Firstpage
    79
  • Lastpage
    81
  • Abstract
    GaN MOS capacitors were fabricated using silicon dioxide deposited by low-pressure chemical vapor deposition oxide at 900/spl deg/C. The MOS capacitor flatband voltage shift versus temperature was used to determine a pyroelectric charge coefficient of 3.7 /spl times/ 10/sup 9/ q/cm/sup 2/-K, corresponding to a pyroelectric voltage coefficient of 7.0 /spl times/ 10/sup 4/ V/m-K.
  • Keywords
    CVD coatings; III-V semiconductors; MOS capacitors; gallium compounds; pyroelectric devices; silicon compounds; wide band gap semiconductors; 900 C; MOS capacitor; flatband voltage shift; low-pressure chemical vapor deposition; n-type GaN; pyroelectric charge coefficient; pyroelectric voltage coefficient; silicon dioxide; Electrons; Gallium nitride; Inorganic materials; MOCVD; MOS capacitors; Photonic band gap; Piezoelectric polarization; Pyroelectricity; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.981312
  • Filename
    981312
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1559839