JVD silicon nitride as tunnel dielectric in p-channel flash memory

Author

She, Min ; King, Tsu-Jae ; Hu, Chenming ; Zhu, Wenjuan ; Luo, Zhijiong ; Han, Jin-Ping ; Ma, Tso-Ping

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

23

Issue

2

fYear

2002

Firstpage

91

Lastpage

93

Abstract

High-quality jet vapor deposition nitride is investigated as a tunnel dielectric for flash memory device application. Compared to control devices with SiO/sub 2/ tunnel dielectric, faster programming speed as well as better retention time are achieved with low programming voltage. The p-channel devices can be programmed by hot electrons and erased by hot holes, or vice versa. Multilevel programming capability is shown.

Keywords

CMOS memory circuits; charge injection; dielectric thin films; flash memories; hot carriers; silicon compounds; tunnelling; SiN; band-to-band tunneling-induced injection; charge injection; faster programming speed; hot electrons; hot holes; jet vapor deposition nitride; low programming voltage; multilevel programming; p-channel flash memory; tunnel dielectric; CMOS technology; Chemical vapor deposition; Dielectric devices; Flash memory; Hot carriers; Nonvolatile memory; Secondary generated hot electron injection; Silicon; Threshold voltage; Voltage control;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.981316

Filename

981316