Three level charge pumping on a single interface trap

Author

Militaru, Liviu ; Masson, Pascal ; Guegan, Georges

Author_Institution

Lab. de Phys. de la Matiere, Inst. Nat. des Sci. Appliquees de Lyon, Villeurbanne, France

Volume

23

Issue

2

fYear

2002

Firstpage

94

Lastpage

96

Abstract

We present results obtained by performing two and three level charge pumping (CP) technique on a single trap present at the SiO/sub 2//Si interface of deep-submicron MOS transistor (50 nm length). Using two-level CP method, we have measured the emission time constant of a single trap and we have verified by numerical simulations the Shockley-Read-Hall (SRH) theory. Three level CP measurements allow an accurate determination of the capture cross section and the energy level of the trap. For the particular trap presented in this paper, we have found E/sub t/ - E/sub V/ /spl ap/ 0.83 eV, /spl sigma//sub n/ /spl ap/ 6 /spl times/ 10/sup -17/ cm/sup 2/.

Keywords

MOSFET; charge injection; interface states; semiconductor-metal boundaries; silicon; silicon compounds; Shockley-Read-Hall theory; SiO/sub 2/-Si; TMOS; capture cross section; deep-submicron MOS transistor; emission time constant; single interface trap; three level charge pumping; trap energy level; two level charge pumping; Charge carrier processes; Charge pumps; Current measurement; Electron traps; Energy capture; Energy states; MOSFETs; Photonic band gap; Probes; Silicon;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.981317

Filename

981317