Some measurement results for frequency-dependent inductance of IC interconnects on a lossy silicon substrate

Author

De Roest, D. ; Ymeri, H. ; Vandenberghe, S. ; Stucchi, M. ; Schreurs, Dominique ; Maex, K. ; Nauwelaers, Bart

Author_Institution

Interuniv. Microelectron. Center (IMEC), Leuven, Belgium

Volume

23

Issue

2

fYear

2002

Firstpage

103

Lastpage

104

Abstract

Frequency dependent measurements of scattering (S) parameters using a vector network analyzer (VNA) have been performed on IC interconnects on a lossy silicon substrate. The multiline calibration method has been used to perform the de-embedding of the line parameters, from which the line inductance is extracted. A highly accurate closed-form approximation for frequency-dependent impedance per unit length of a lossy silicon substrate for IC interconnects has been used to compare with the measurements performed.

Keywords

S-parameters; calibration; inductance; inductance measurement; integrated circuit interconnections; integrated circuit measurement; silicon; substrates; IC interconnects; S-parameters; Si; VNA; closed-form approximation; de-embedding; frequency dependent measurements; frequency-dependent impedance per unit length; frequency-dependent inductance; line inductance extraction; line parameters; lossy Si substrate; multiline calibration method; scattering parameters; vector network analyzer; Calibration; Frequency dependence; Frequency measurement; Impedance; Inductance measurement; Loss measurement; Performance analysis; Performance evaluation; Scattering parameters; Silicon;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.981320

Filename

981320