Title :
1.1 Gbit/s RF-interconnect based on 10 GHz RF-modulation in 0.18 μm CMOS
Author :
Shin, H. ; Chang, M.F.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fDate :
1/17/2002 12:00:00 AM
Abstract :
An RF-interconnect transceiver based on the RF-modulation and capacitive coupling for a high speed digital interface is presented. The prototype transceiver is implemented in 0.18 μm CMOS technology. It demonstrates a maximum data rate of 1.1 Gbit/s with a 10 GHz RF-modulation. This RF-interconnect is believed to be instrumental for high-speed link applications in multi-memory and microprocessor interfaces
Keywords :
CMOS digital integrated circuits; computer interfaces; data communication equipment; digital communication; high-speed integrated circuits; integrated circuit interconnections; modulation; phase shift keying; transceivers; 0.18 micron; 1.1 Gbit/s; 10 GHz; BPSK; CMOS technology; RF-interconnect transceiver; RF-modulation; binary phase shift keying; capacitive coupling; high speed digital interface; high-speed link applications; microprocessor interfaces; multi-memory interfaces;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020052
