An accurate on-wafer deembedding technique with application to HBT devices characterization

Author

Bousnina, Sami ; Falt, Chris ; Mandeville, Pierre ; Kouki, Ammar B. ; Ghannouchi, Fadhel M.

Author_Institution

Dept. de Genie Electrique et de Genie Informatique, Ecole Polytech. de Montreal, Que., Canada

Volume

50

Issue

2

fYear

2002

fDate

2/1/2002 12:00:00 AM

Firstpage

420

Lastpage

424

Abstract

An accurate deembedding technique for on-wafer measurements of an active device´s S-parameter is presented in this paper. This deembedding technique accounts in a systematic way for effect of all parasitic elements surrounding the device. These parasitic elements are modeled as a four-port network. Closed-form equations are derived for deembedding purposes of this four-port network. The proposed deembedding technique was used to extract small-signal model parameters of a 2×25 μm emitter GaInP/GaAs heterojunction bipolar transistor device, and excellent agreement between measured and model-simulated S-parameter was obtained up to 30 GHz

Keywords

III-V semiconductors; S-parameters; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave measurement; multiport networks; semiconductor device measurement; semiconductor device models; 30 GHz; GaInP-GaAs; GaInP/GaAs heterojunction bipolar transistor; S-parameters; active device; deembedding technique; four-port network; on-wafer measurement; parameter extraction; parasitic elements; small-signal model; Calibration; Equations; Equivalent circuits; Frequency; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Microwave circuits; Microwave devices; Probes;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.982218

Filename

982218