Anisotropic permittivity and attenuation extraction from propagation constant measurements using an anisotropic full-wave Green´s function solver for coplanar ferroelectric thin-film devices

Author

Krowne, Clifford M. ; Daniel, Maurice ; Kirchoefer, Steven W. ; Pond, Jeffrey M.

Author_Institution

Div. of Electron. Sci. & Technol., Naval Res. Lab., Washington, DC, USA

Volume

50

Issue

2

fYear

2002

fDate

2/1/2002 12:00:00 AM

Firstpage

537

Lastpage

548

Abstract

In this paper, a full-wave spectral-domain integral-equation technique is used to study double substrate layer coplanar devices with the ferroelectric thin film adjacent to the conductor guiding interfacial surface. The Green´s function is used in the anisotropic situation for anisotropic permittivities. In examining specific laboratory data, going from an unbiased static electric field to the biased case, the permittivity tensor is allowed to go from a unity tensor to a uniaxial one. Consistent with this permittivity tensor behavior, the attenuation trend with frequency and its amplitude is also found

Keywords

Green´s function methods; coplanar transmission lines; coplanar waveguides; ferroelectric devices; ferroelectric thin films; integral equations; permittivity; spectral-domain analysis; tensors; waveguide theory; Green´s function; anisotropic full-wave Green´s function solver; anisotropic permittivities; anisotropic permittivity; anisotropic situation; attenuation; attenuation trend; biased static electric field; conductor guiding interfacial surface; coplanar ferroelectric thin-film devices; double substrate layer coplanar devices; electromagnetic propagation; ferroelectric thin film; full-wave spectral-domain integral-equation technique; permittivity tensor; propagation constant measurements; unbiased static electric field; uniaxial permittivity tensor; unity permittivity tensor; Anisotropic magnetoresistance; Attenuation; Conductive films; Data mining; Ferroelectric materials; Green´s function methods; Permittivity; Substrates; Tensile stress; Thin film devices;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.982233

Filename

982233