DocumentCode :
1560055
Title :
Anisotropic permittivity and attenuation extraction from propagation constant measurements using an anisotropic full-wave Green´s function solver for coplanar ferroelectric thin-film devices
Author :
Krowne, Clifford M. ; Daniel, Maurice ; Kirchoefer, Steven W. ; Pond, Jeffrey M.
Author_Institution :
Div. of Electron. Sci. & Technol., Naval Res. Lab., Washington, DC, USA
Volume :
50
Issue :
2
fYear :
2002
fDate :
2/1/2002 12:00:00 AM
Firstpage :
537
Lastpage :
548
Abstract :
In this paper, a full-wave spectral-domain integral-equation technique is used to study double substrate layer coplanar devices with the ferroelectric thin film adjacent to the conductor guiding interfacial surface. The Green´s function is used in the anisotropic situation for anisotropic permittivities. In examining specific laboratory data, going from an unbiased static electric field to the biased case, the permittivity tensor is allowed to go from a unity tensor to a uniaxial one. Consistent with this permittivity tensor behavior, the attenuation trend with frequency and its amplitude is also found
Keywords :
Green´s function methods; coplanar transmission lines; coplanar waveguides; ferroelectric devices; ferroelectric thin films; integral equations; permittivity; spectral-domain analysis; tensors; waveguide theory; Green´s function; anisotropic full-wave Green´s function solver; anisotropic permittivities; anisotropic permittivity; anisotropic situation; attenuation; attenuation trend; biased static electric field; conductor guiding interfacial surface; coplanar ferroelectric thin-film devices; double substrate layer coplanar devices; electromagnetic propagation; ferroelectric thin film; full-wave spectral-domain integral-equation technique; permittivity tensor; propagation constant measurements; unbiased static electric field; uniaxial permittivity tensor; unity permittivity tensor; Anisotropic magnetoresistance; Attenuation; Conductive films; Data mining; Ferroelectric materials; Green´s function methods; Permittivity; Substrates; Tensile stress; Thin film devices;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/22.982233
Filename :
982233
Link To Document :
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