Improved automatic parameter extraction of InP-HBT small-signal equivalent circuits

Author

Willén, B. ; Rohner, Marcel ; Schnyder, I. ; Jäckel, H.

Author_Institution

Dept. of Electron., R. Inst. of Technol., Kista, Sweden

Volume

50

Issue

2

fYear

2002

fDate

2/1/2002 12:00:00 AM

Firstpage

580

Lastpage

583

Abstract

An improved automatic extraction technique for determination of the element values of an InP heterojunction-bipolar-transistor small-signal T-model is presented. Numerical optimization is shown to yield reproducible and physically relevant results when using a suitable figure-of-merit. The outcome of such an extraction is displayed for a range of operation points and the resulting bias dependencies of the element values is shown to be in good agreement with theoretical effects. The technique is further used to validate the quality of the extraction itself by showing a significant sensitivity to a deliberate error in the value of each element

Keywords

III-V semiconductors; equivalent circuits; heterojunction bipolar transistors; indium compounds; optimisation; semiconductor device models; InP; InP heterojunction-bipolar-transistor small-signal T-model; InP-HBT small-signal equivalent circuits; automatic extraction technique; automatic parameter extraction; bias dependencies; element values; error sensitivity; figure-of-merit; numerical optimization; operation points; Design automation; Equations; Equivalent circuits; Frequency; Indium phosphide; Integrated circuit modeling; Microwave theory and techniques; Parameter extraction; Rectangular waveguides; Waveguide discontinuities;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.982239

Filename

982239