Title :
A 32-word by 32-bit three-port bipolar register file implemented using a SiGe HBT BiCMOS technology
Author :
Steidl, Samuel A. ; McDonald, John F.
Author_Institution :
Sierra Monolithics Inc., Redondo Beach, CA, USA
fDate :
2/1/2002 12:00:00 AM
Abstract :
Describes a novel system level design for a 32-word by 32-bit bipolar register file with two read ports and one write port. The register file is implemented using a SiGe HBT BiCMOS technology and emitter-coupled logic (ECL)-style circuits. It has dimensions of 1.0 mm by 1.8 mm. The read access time for the register Me is between 340 and 350 ps using read port A, while the read access time using read port B is between 360 and 380 ps. Read access times as low as 290 ps were measured for some columns, however. The write access time for the register file is between 250 and 340 ps, using a write enable pulse with a width between 130 and 170 ps. The estimated register file power dissipation is 4.7 W using a 4.5-V supply
Keywords :
BiCMOS memory circuits; Ge-Si alloys; current-mode logic; integrated circuit design; multiport networks; semiconductor materials; 130 to 170 ps; 250 to 340 ps; 290 ps; 32 bit; 340 to 350 ps; 360 to 380 ps; 4.5 V; 4.7 W; HBT BiCMOS technology; SiGe; current-mode logic; emitter-coupled logic style; memory integrated circuits; read access time; register file power dissipation; system level design; three-port bipolar register file; write access time; BiCMOS integrated circuits; CMOS technology; Decoding; Driver circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Logic circuits; Logic devices; Registers; Silicon germanium;
Journal_Title :
Solid-State Circuits, IEEE Journal of
