• DocumentCode
    1560256
  • Title

    High performance selectively oxidized VCSELs and arrays for parallel high-speed optical interconnects

  • Author

    Mederer, Felix ; Ecker, Irene ; Joos, Jürgen ; Kicherer, Max ; Unold, Heiko J. ; Ebeling, Karl Joachim ; Grabherr, Martin ; Jäger, Roland ; King, Roger ; Wiedenmann, Dieter

  • Author_Institution
    Dept. of Optoelectronics, Ulm Univ., Germany
  • Volume
    24
  • Issue
    4
  • fYear
    2001
  • fDate
    11/1/2001 12:00:00 AM
  • Firstpage
    442
  • Lastpage
    449
  • Abstract
    High-bandwidth single-mode selectively oxidized vertical-cavity surface-emitting laser (VCSEL) arrays operate at 980 nm or 850 nm emission wavelength for substrate or epitaxial side emission. Coplanar feeding lines and polyimide passivation are used to reduce electrical parasitics in top-emitting GaAs and bottom-emitting InGaAs VCSELs. To enhance fundamental single-mode emission for larger devices of reduced series resistance a surface relief transverse mode filter is employed. Fabricated VCSELs are applied in various interconnect schemes. InGaAs quantum-well based VCSELs at 935 nm emission wavelength are investigated for use in perfluorinated graded-index plastic-optical fiber (GI-POF) links. We obtain a 7 Gb/s pseudo random bit sequence (PRBS) nonreturn-to-zero (NRZ) data transmission over 80 m long 155 μm diameter GI-POF. We investigate data transmission over standard 1300 nm, 9 μm core diameter single-mode fiber with selectively oxidized single-mode GaAs and InGaAs VCSELs. We achieve biased 3 Gb/s and bias-free 1 Gb/s pseudo-random data transmission over 4.3 km at 830 nm emission wavelength where a simple fiber mode filter is used to suppress intermodal dispersion caused by the second order fiber mode. For the first time, we demonstrate 12.5 Gb/s data rate transmission of PRBS signals over 100 m graded-index multimode fiber or 1 km single-mode fiber using high performance single-mode GaAs VCSELs of 12.3 GHz modulation bandwidth emitting at λ=850 nm
  • Keywords
    III-V semiconductors; data communication equipment; gallium arsenide; gradient index optics; indium compounds; optical cables; optical fibre dispersion; optical interconnections; quantum well lasers; semiconductor device packaging; semiconductor laser arrays; surface emitting lasers; 1 Gbit/s; 1 km; 100 m; 12.3 GHz; 12.5 Gbit/s; 1300 nm; 155 micron; 3 Gbit/s; 4.3 km; 7 Gbit/s; 80 m; 830 nm; 850 nm; 9 micron; 935 nm; 980 nm; GaAs; III V semiconductors; InGaAs; coplanar feeding lines; electrical parasitics; graded-index multimode fiber; intermodal dispersion; nonreturn-to-zero data transmission; parallel high-speed optical interconnects; perfluorinated graded-index plastic-optical fiber; polyimide passivation; pseudo random bit sequence; pseudo-random data transmission; quantum-well based VCSELs; selectively oxidized VCSEL arrays; single-mode emission; single-mode fiber; surface relief transverse mode filter; Data communication; Filters; Gallium arsenide; Indium gallium arsenide; Optical arrays; Substrates; Surface emitting lasers; Surface resistance; Surface waves; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Journal_Title
    Advanced Packaging, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1521-3323
  • Type

    jour

  • DOI
    10.1109/6040.982827
  • Filename
    982827