A 5.7 GHz interpolative VCO using InGaP/GaAs HBT technology

Author

Yu, Shih-An ; Meng, Chin-Chun ; Lu, Shey-Shi

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

12

Issue

2

fYear

2002

Firstpage

37

Lastpage

38

Abstract

A 5.7 GHz monolithic interpolative voltage-controlled oscillator using InGaP/GaAs HBT technology is demonstrated for the first time. Frequency tuning is achieved by changing the open loop gain instead of the tank capacitor. The experimental result showed that a 500 MHz tuning range at 5.7 GHz was realized, which can meet the requirement of 5.7 GHz ISM band.

Keywords

III-V semiconductors; MMIC oscillators; SPICE; bipolar MMIC; circuit tuning; gallium arsenide; gallium compounds; indium compounds; negative resistance circuits; transfer functions; voltage-controlled oscillators; 5.7 GHz; Gilbert quad; HBT IC process; HBT technology; ISM band; InGaP-GaAs; Star-HSPICE; core circuit; cross-coupled differential pair oscillator; frequency tuning; monolithic interpolative VCO; negative resistance oscillator; open loop gain change; open loop transfer function; phase noise; single-to-differential converting circuit; BiCMOS integrated circuits; Circuit optimization; Circuit testing; Gallium arsenide; Heterojunction bipolar transistors; Resonant frequency; Tuning; Varactors; Voltage control; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/7260.982869

Filename

982869