Optimization of the temporal response of II-VI direct type semiconductor detectors for flat-panel pulsed X-ray imaging

Author

Giakos, George C. ; Guntupalli, R. ; Nemer, R. ; Odogba, J. ; Shah, N. ; Vedantham, S. ; Suryanarayanan, S. ; Chowdhury, S. ; Passerini, A.G. ; Mehta, K. ; Sumrain, S. ; Patnekar, N. ; Nataraj, K. ; Evans, E. ; Russo, F.

Author_Institution

Dept. of Electr. Eng., Akron Univ., OH, USA

Volume

50

Issue

6

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

1610

Lastpage

1614

Abstract

The rising and falling edges of detected signal pulses have been measured utilizing X-ray ionization of a planar Cd_1-xZn_xTe system under different irradiation geometries, at different detector thicknesses, and applied electric fields. The experimental results of this study indicate that the time response of the CdZnTe based X-ray system is suitable for digital pulsed radiographic applications

Keywords

II-VI semiconductors; X-ray detection; X-ray imaging; cadmium compounds; diagnostic radiography; semiconductor devices; zinc compounds; CdZnTe; CdZnTe based X-ray system; II-VI direct type semiconductor detectors; X-ray ionization; applied electric fields; detector thicknesses; digital pulsed radiographic applications; flat-panel digital radiography; flat-panel pulsed X-ray imaging; irradiation geometries; planar Cd_1-xZn_xTe system; temporal response optimisation; time response; Electric variables measurement; Geometry; Ionization; Pulse measurements; Signal detection; Tellurium; Thickness measurement; X-ray detection; X-ray detectors; Zinc;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/19.982954

Filename

982954