• DocumentCode
    1560436
  • Title

    Single-event upset in the PowerPC750 microprocessor

  • Author

    Swift, Gary M. ; Fannanesh, F.F. ; Guertin, Steven M. ; Irom, Farokh ; Millward, Douglas G.

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • Volume
    48
  • Issue
    6
  • fYear
    2001
  • fDate
    12/1/2001 12:00:00 AM
  • Firstpage
    1822
  • Lastpage
    1827
  • Abstract
    Proton and heavy ion upset susceptibility has been measured individually for six types of storage elements in an advanced commercial processor, the PowerPC750, from two manufacturers: Motorola and IBM. Data on interfering program malfunctions was also collected. Compared to earlier PPC603e results, the upset susceptibility has decreased somewhat
  • Keywords
    fault diagnosis; integrated circuit testing; ion beam effects; microprocessor chips; proton effects; PowerPC750 microprocessor; SEE; SEU; advanced commercial processor; fault diagnosis; heavy ion upset susceptibility; interfering program malfunctions; proton upset susceptibility; radiation effects; single-event effects; single-event upset; storage elements; upset susceptibility reduction; Laboratories; Manufacturing processes; Materials testing; Microprocessors; Propulsion; Protons; Registers; Space exploration; Space missions; Space technology;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.983136
  • Filename
    983136