Title :
Single-event upset in the PowerPC750 microprocessor
Author :
Swift, Gary M. ; Fannanesh, F.F. ; Guertin, Steven M. ; Irom, Farokh ; Millward, Douglas G.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fDate :
12/1/2001 12:00:00 AM
Abstract :
Proton and heavy ion upset susceptibility has been measured individually for six types of storage elements in an advanced commercial processor, the PowerPC750, from two manufacturers: Motorola and IBM. Data on interfering program malfunctions was also collected. Compared to earlier PPC603e results, the upset susceptibility has decreased somewhat
Keywords :
fault diagnosis; integrated circuit testing; ion beam effects; microprocessor chips; proton effects; PowerPC750 microprocessor; SEE; SEU; advanced commercial processor; fault diagnosis; heavy ion upset susceptibility; interfering program malfunctions; proton upset susceptibility; radiation effects; single-event effects; single-event upset; storage elements; upset susceptibility reduction; Laboratories; Manufacturing processes; Materials testing; Microprocessors; Propulsion; Protons; Registers; Space exploration; Space missions; Space technology;
Journal_Title :
Nuclear Science, IEEE Transactions on
