Application determination of single-event transient characteristics in the LM 111 comparator

Author

Sternberg, A.L. ; Massengill, L.W. ; Schrimpf, R.D. ; Calvel, P.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Tennessee State Univ., Nashville, TN, USA

Volume

48

Issue

6

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

1855

Lastpage

1858

Abstract

The effect of an integrated circuit´s application can have a profound effect on its single-event transient response. This paper demonstrates how small changes in the application, of which the integrated circuit is a part, can change which devices are sensitive and the critical charge to upset. We show this in a simulation study using an undervoltage detector based on the LM111 voltage comparator. We found three different transistors to be the most sensitive device, depending on the application. When the sensitive transistor changed, the critical charge changed by several orders of magnitude

Keywords

analogue integrated circuits; circuit simulation; comparators (circuits); detector circuits; radiation effects; transient response; LM111 voltage comparator; analog comparator; critical charge to upset; simulation study; single-event transient characteristics; transient response; undervoltage detector; Analog circuits; Application specific integrated circuits; Capacitance; Circuit simulation; Circuit testing; Detectors; Digital circuits; Performance evaluation; Power supplies; Threshold voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.983142

Filename

983142