• DocumentCode
    1560444
  • Title

    An improved stripe-cell SEGR hardened power MOSFET technology

  • Author

    Savage, Mark W. ; Burton, Donald I. ; Wheatley, C. Frank ; Titus, Jeffrey L. ; Gillberg, James E.

  • Author_Institution
    NAVSEA Crane, IN, USA
  • Volume
    48
  • Issue
    6
  • fYear
    2001
  • fDate
    12/1/2001 12:00:00 AM
  • Firstpage
    1872
  • Lastpage
    1878
  • Abstract
    A new single-event gate rupture radiation-hardened power MOSFET is reported. It is based upon a well-established radiation-hardened technology described in 1996. The hexagonal cells used in prior work are replaced with a stripe-cell structure producing demonstrated performance improvements
  • Keywords
    power MOSFET; radiation hardening (electronics); semiconductor technology; space vehicle electronics; LET; performance improvements; power MOSFET; radiation-hardened MOSFET; roll angle; single-event gate rupture; stripe-cell structure; tilt angle; Cranes; Electrons; FETs; MOSFET circuits; Manufacturing; Power MOSFET; Protons; Space technology; Termination of employment; Topology;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.983145
  • Filename
    983145
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1560444