A new physics-based model for understanding single-event gate rupture in linear devices

Author

Boruta, Nicholas ; Lum, Gary K. ; O´Donnell, Hugh ; Robinette, L. ; Shaneyfelt, Marty R. ; Schwank, Jim R.

Author_Institution

Lockheed Martin Space Syst. Co., Sunnyvale, CA, USA

Volume

48

Issue

6

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

1917

Lastpage

1924

Abstract

This paper presents a new physics-based model for understanding the basic mechanism of single-event gate rupture (SEGR) in analog devices. This model accounts for the different competing physics mechanisms, such as carrier drift, diffusion, recombination in the drift diffusion, and Poisson´s equations, to explain the dependence of SEGR on biasing voltage, cross section, and critical electric field strength. Hence, the model provides a more accurate method of understanding and predicting the breakdown of oxides from heavy-ion strikes

Keywords

MOS analogue integrated circuits; MOS capacitors; MOSFET; dielectric thin films; ion beam effects; operational amplifiers; semiconductor device breakdown; semiconductor device models; OP27EJ opamp; Poisson equation; analog devices; biasing voltage; carrier drift; critical electric field strength; destructive SEGR; dielectric breakdown; diffusion; heavy-ion strikes; linear devices; oxide breakdown; physics-based model; recombination; single-event gate rupture; Capacitors; Circuits; Electric breakdown; Energy exchange; Laboratories; Operational amplifiers; Physics; Poisson equations; Predictive models; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.983151

Filename

983151