Analytical microdosimetry model for proton-induced SEU in modern devices

Author

Barak, J.

Author_Institution

Soreq Nucl. Res. Center, Yavne´´el, Israel

Volume

48

Issue

6

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

1937

Lastpage

1945

Abstract

Analytical expressions were derived for the probability of having a secondary ion with a given linear energy transfer value following a p+Si nuclear event. Proton-induced single-event upset cross sections are calculated by integrating this probability with the heavy-ion cross section. The model yields good agreement with the measured cross sections of present device technologies. It is expected to be even better for future submicrometer devices. The approach of the new model is used for other applications like the total ionizing dose of the products of the p+Si reactions

Keywords

dosimetry; integrated circuit modelling; probability; proton effects; semiconductor device models; analytical microdosimetry model; heavy-ion cross section; linear energy transfer value; p+Si nuclear event; probability; proton-induced SEU cross sections; proton-induced single events; secondary ion; single-event upset; submicron devices; total ionizing dose; Alpha particles; Analytical models; Energy exchange; Neutrons; Predictive models; Probability; Projectiles; Protons; Silicon on insulator technology; Single event upset;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.983154

Filename

983154