Simulation of nucleon-induced nuclear reactions in a simplified SRAM structure: scaling effects on SEU and MBU cross sections

Author

Wrobel, F. ; Palau, J.-M. ; Calvet, M.-C. ; Bersillon, O. ; Duarte, H.

Author_Institution

CEM2, Univ. Montpellier II, France

Volume

48

Issue

6

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

1946

Lastpage

1952

Abstract

Academic 128×128 bit structures are simulated to study soft error cross sections induced by high-energy nucleons (n/p) in SRAM memories. The distributions of secondary ions are obtained by the nuclear high energy transport code and analyzed in terms of energy deposited in the sensitive volume of each memory cell. Multiple-bit upset cross sections are compared to single-event upset cross sections, and trends associated with scaling effects are presented

Keywords

CMOS memory circuits; SRAM chips; integrated circuit modelling; radiation effects; simulation; 16384 bit; CMOS technology; MBU cross sections; SEU cross sections; SRAM structure; critical energy; device downscaling; high-energy nucleons; memory cell; multiple-bit upset cross sections; nuclear high energy transport code; nucleon-induced nuclear reactions; scaling effects; secondary ions distribution; semiconductor memories; single-event upset cross sections; soft error cross sections; static RAM; Aerospace electronics; Cosmic rays; Helium; Ionization; Monte Carlo methods; Neutrons; Nuclear power generation; Protons; Random access memory; Single event upset;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.983155

Filename

983155