Title :
Detailed analysis of secondary ions´ effect for the calculation of neutron-induced SER in SRAMs
Author :
Hubert, G. ; Palau, J.-M. ; Castellani-Coulié, K. ; Calvet, M.-C. ; Fourtine, S.
Author_Institution :
CEM2, Univ. Montpellier II, France
fDate :
12/1/2001 12:00:00 AM
Abstract :
A new method of neutron soft error rate calculation derived from device simulations and nuclear physics results is presented. The main inputs are only a critical linear energy transfer, a critical charge, and layout dimensions. No classical sensitive volume size is needed because the extension of the sensitive region is described in terms of the variation of the ion efficacy versus its position with respect to the sensitive drain
Keywords :
SRAM chips; circuit simulation; integrated circuit modelling; integrated circuit reliability; integrated circuit testing; neutron effects; SRAMs; critical charge; critical linear energy transfer; device simulations; ion efficacy; layout dimensions; neutron-induced SER; nuclear physics results; secondary ions´ effect; single-event upset; soft error rate calculation; Aerospace electronics; Databases; Energy exchange; Error analysis; Neutrons; Nuclear physics; Nuclear power generation; Random access memory; Single event upset; Vehicles;
Journal_Title :
Nuclear Science, IEEE Transactions on
