• DocumentCode
    1560456
  • Title

    SEU induced by pions in memories from different generations

  • Author

    Duzellier, S. ; Falguére, D. ; Tverskoy, M. ; Ivanov, E. ; Dufayel, R. ; Calvet, M.-C.

  • Author_Institution
    ONERA-DESP, Toulouse, France
  • Volume
    48
  • Issue
    6
  • fYear
    2001
  • fDate
    12/1/2001 12:00:00 AM
  • Firstpage
    1960
  • Lastpage
    1965
  • Abstract
    This paper presents single-event upset cross-sections obtained with pions for a set of SRAMs/DRAMs from different generations. The experimental results show that pions are not more efficient than protons in creating upsets. Predictions using the two-parameters model are presented and discussed
  • Keywords
    CMOS memory circuits; DRAM chips; SRAM chips; integrated circuit measurement; integrated circuit modelling; meson effects; DRAM; SEU cross-sections prediction; SRAM; dynamic RAMs; pion-induced SEUs; pions; semiconductor memories; single-event upset; static RAMs; two-parameters model; Aerospace electronics; Aircraft; Mesons; Neutrons; Particle beams; Pollution measurement; Protons; Random access memory; Single event upset; Testing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.983157
  • Filename
    983157
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1560456