DocumentCode
1560470
Title
FGMOS dosimetry: design and implementation
Author
Martin, Mark N. ; Roth, David R. ; Garrison-Darrin, Ann ; McNulty, Peter J. ; Andreou, Andreas G.
Author_Institution
Appl. Phys. Lab., Johns Hopkins Univ., Laurel, MD, USA
Volume
48
Issue
6
fYear
2001
fDate
12/1/2001 12:00:00 AM
Firstpage
2050
Lastpage
2055
Abstract
We present results from a radiation dosimeter based on the erasure of floating-gate MOS transistors. Background theory and analysis necessary to describe the operation of the sensor are presented
Keywords
MOSFET; dosimeters; semiconductor counters; FGMOS dosimetry; floating-gate MOS transistor; radiation dosimeter; Charge carrier processes; Circuit synthesis; Dosimetry; Electrons; Ionizing radiation sensors; MOSFET circuits; Physics; Radiation effects; Sensor phenomena and characterization; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.983171
Filename
983171
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