Gated-diode characterization of the back-channel interface on irradiated SOI wafers

Author

Lawrence, R.K. ; Ioannou, D.E. ; Jenkins, W.C. ; Liu, S.T.

Author_Institution

SFA Inc., Largo, MD, USA

Volume

48

Issue

6

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

2140

Lastpage

2145

Abstract

A silicon-on-insulator (SOI) MOSFET-based "gated-diode" technique has been applied to study the Si-film/buried-oxide interface of devices that were fabricated on a SIMOX wafer. Since the gated-diode technique is sensitive to recombination current caused by the presence of interface states, the samples were exposed to 10 keV X-ray irradiation to enhance the development of SOI back-channel interface states. The measured peak in the gated-diode current curve was observed to increase in magnitude and move in voltage as a function of exposure to radiation in a manner consistent with increasing interface states and increasing trapped oxide charge. Using a two-dimensional numerical simulator, with a single acceptor interface trap at 0.7 eV, the gated-diode current was modeled as a function of 10 keV X-ray exposure

Keywords

MOSFET; SIMOX; X-ray effects; buried layers; electron-hole recombination; interface states; semiconductor device measurement; 10 keV; SIMOX wafer; SOI MOSFET; Si-SiO₂; Si-film/buried-oxide interface; X-ray irradiation; acceptor interface trap; back-channel interface states; gated-diode technique; recombination current; trapped oxide charge; two-dimensional numerical simulation; CMOS technology; Charge measurement; Current measurement; Density measurement; Interface states; MOSFETs; Numerical simulation; Radiation effects; Silicon on insulator technology; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.983186

Filename

983186