Anomalous radiation effects in fully depleted SOI MOSFETs fabricated on SIMOX

Author

Li, Ying ; Niu, Guofu ; Cressler, John D. ; Patel, Jagdish ; Marshall, Cheryl J. ; Marshall, Paul W. ; Kim, Hak S. ; Reed, Robert A. ; Palmer, Michael J.

Author_Institution

Dept. of Electr. & Comput. Eng., Auburn Univ., AL, USA

Volume

48

Issue

6

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

2146

Lastpage

2151

Abstract

We investigate the proton tolerance of fully depleted silicon-on-insulator (SOI) MOSFETs with H-gate and regular-gate structural configurations. For the front-gate characteristics, the H-gate does not show the edge leakage observed in the regular-gate transistor. An anomalous kink in the back-gate linear I_D-V _GS characteristics of the fully depleted SOI nFETs has been observed at high radiation doses. This kink is attributed to charged traps generated in the bandgap at the buried oxide/silicon film interface during irradiation. Extensive two-dimensional simulations with MEDICI were used to understand the physical origin of this kink. We also report unusual self-annealing effects in the devices when they are cooled to liquid nitrogen temperature

Keywords

MOSFET; SIMOX; annealing; buried layers; interface states; leakage currents; proton effects; radiation hardening (electronics); semiconductor device models; H-gate configurations; MEDICI; SIMOX; Si-SiO₂; anomalous kink; anomalous radiation effects; back-gate linear I-V characteristics; buried oxide/silicon film interface; charged traps; edge leakage; electron charge density; front-gate characteristics; fully depleted SOI MOSFET; high radiation doses; proton tolerance; regular-gate configurations; self-annealing effects; strong inversion region; total dose hardness; two-dimensional simulations; CMOS technology; Isolation technology; MOSFETs; Microelectronics; Photonic band gap; Protons; Radiation effects; Semiconductor films; Silicon on insulator technology; Space technology;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.983187

Filename

983187