Aging and baking effects on the radiation hardness of MOS capacitors

Author

Karmarkar, A.P. ; Choi, B.K. ; Schrimpf, R.D. ; Fleetwood, D.M.

Author_Institution

Dept. of Mater. Sci., Vanderbilt Univ., Nashville, TN, USA

Volume

48

Issue

6

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

2158

Lastpage

2163

Abstract

A decrease in the oxide-charge trapping efficiency of Al- and TaSi-Al-gate MOS capacitors with oxide thicknesses ranging from 33 to 100 nm was observed after more than 14 years of room-temperature storage. The decrease in trapping efficiency can be reduced or even eliminated in Al-gate (and to a lesser degree TaSi-Al) devices by baking them at temperatures up to ~200 °C. This change in aged-device radiation response after baking is largely independent of baking time, at least for 1-18 h bakes. Poly-Si gate capacitors processed and stored under similar conditions show no significant change in radiation hardness due to aging or baking. Mechanisms responsible for this behavior and implications of the results for hardness assurance are discussed

Keywords

MOS capacitors; ageing; radiation hardening; 14 year; 293 to 298 K; 33 to 100 nm; Al; MOS capacitors; Si; TaSi; aging; baking; hardness; oxide-charge trapping efficiency; poly-Si gate capacitors; radiation response; Aging; Annealing; Fabrication; MOS capacitors; MOS devices; Oxidation; Radiation effects; Temperature sensors; Testing; Thermal stresses;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.983189

Filename

983189