Effect of aging on radiation response of bipolar transistors

Author

Pershenkov, V.S. ; Slesarev, A.Y. ; Sogoyan, A.V. ; Belyakov, V.V. ; Kekukh, V.B. ; Bashin, A.Y. ; Ivashin, D.V. ; Motchkine, V.S. ; Ulimov, V.N. ; Emelianov, V.V.

Author_Institution

Moscow Eng. Phys. Inst., Russia

Volume

48

Issue

6

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

2164

Lastpage

2169

Abstract

A thermally activated aging process is investigated by experimental evaluation of the change in radiation response of test PNP and NPN transistors over a wide range of emitter-base bias conditions after preirradiation elevated-temperature stress and infrared illumination. A comparison of radiation response after temperature stress for transistors with rather different ages is investigated. For "young" transistors, zero change (zero aging) in radiation response after elevated temperature stress at some emitter-base bias was observed. A qualitative physical model is offered to explain the experimental results. The model is based on effect of electron trap accumulation during elevated-temperature stress. Short-time infrared illumination provides effects similar to preirradiation long-term temperature stress and annealing of irradiated devices at elevated temperature

Keywords

ageing; annealing; bipolar transistors; electron traps; interface states; radiation effects; NPN transistors; PNP transistors; annealing; bipolar transistor; electron trap accumulation; emitter-base bias; infrared illumination; qualitative model; radiation response; temperature stress; thermally activated aging; Aging; Annealing; Bipolar transistors; Electron traps; Lighting; MOSFETs; Microelectronics; Temperature; Testing; Thermal stresses;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.983190

Filename

983190