A methodology for identifying laser parameters for equivalent heavy-ion hits

Author

Zhu, Xiaowei ; Bhuva, Bharat ; Cirba, Claude R. ; Massengill, Lloyd ; Buchner, Stephen ; Dodd, Paul E.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA

Volume

48

Issue

6

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

2174

Lastpage

2179

Abstract

Pulsed lasers show excellent promise for single-event upset (SEU) studies in laboratory environments due to their simplicity of use. However, a one-to-one relationship between a laser hit and a heavy-ion hit has not been developed so far. With the assumption that the collected charge from a SEU hit dictates the circuit-level response, equivalency between a laser hit and heavy-ion hit can be established if the collected charge from both hits is identical. This paper presents a methodology to identify the equivalent laser characteristics for a heavy-ion hit by calculating the collected charge through device-level simulations. Such knowledge will enable SEU hardness assurance of circuits using lasers

Keywords

ion beam effects; laser beam effects; semiconductor process modelling; semiconductor technology; collected charge; device-level simulations; hardness assurance; heavy-ion hit; laser hit; pulsed lasers; single-event upset; Circuit simulation; Clocks; Costs; Industrial relations; Laser modes; Laser tuning; Optical pulses; Pulse circuits; Semiconductor lasers; Single event upset;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.983192

Filename

983192