Title :
A nondamaging beam blanking SEM test method and its application to highly integrated devices
Author :
Makihara, A. ; Kuboyama, S. ; Matsuda, S. ; Nemoto, N. ; Ohtomo, H. ; Furuse, K. ; Baba, S. ; Hirose, T.
Author_Institution :
Nat. Space Dev. Agency of Japan, Ibaraki, Japan
fDate :
12/1/2001 12:00:00 AM
Abstract :
The origin of damage causing radiation in a beam blanking scanning electron micrograph (BBSEM) was identified and removed for single-event upset (SEU) testing. The improved BBSEM was successfully used to locate SEU sensitive areas in highly integrated silicon devices
Keywords :
CMOS memory circuits; DRAM chips; electron beam effects; integrated circuit testing; ion beam effects; nondestructive testing; scanning electron microscopy; 128 Mbit; BBSEM; CMOS SDRAM; SEU sensitive areas; SEU testing; beam blanking scanning electron micrograph; highly integrated devices; highly integrated silicon devices; nondamaging beam blanking SEM test method; radiation damage; single-event upset testing; Blanking; Cyclotrons; Electron beams; Ion accelerators; Ion beams; Pulse generation; Silicon devices; Single event upset; Test equipment; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
