DocumentCode
1560497
Title
Early lethal SEGR failures of VDMOSFETs considering nonuniformity in the rad-hard device distribution
Author
Wheatley, Thomas H. ; Wheatley, C. Frank ; Titus, Jeffrey L.
Volume
48
Issue
6
fYear
2001
fDate
12/1/2001 12:00:00 AM
Firstpage
2217
Lastpage
2221
Abstract
In 1999, Titus et al. studied single-event gate rupture failures of vertical MOSFETs for many parameters where the MOSFET universe was assumed to consist of homogeneous devices. A non-homogeneous universe is now considered. Time-to-failure is studied using Monte Carlo methods. Boundaries are ascribed applying the empirical equation presented by Titus et al
Keywords
MOSFET; Monte Carlo methods; failure analysis; radiation hardening (electronics); semiconductor device reliability; MOSFET; Monte Carlo methods; VDMOSFET; early lethal SEGR failures; empirical equation; homogeneous devices; inhomogeneous MOSFETs; nonuniformity; rad-hard device distribution; single-event gate rupture failures; time-to-failure; vertical MOSFETs; Cranes; Electronic components; Integral equations; MOSFETs; Monte Carlo methods; Orbits; Protons; Radiation hardening; Risk management; Space vehicles;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.983198
Filename
983198
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