Title :
Proton radiation response of SiGe HBT analog and RF circuits and passives
Author :
Cressler, John D. ; Hamilton, Michael C. ; Krithivasan, Ramkumar ; Ainspan, Herschel ; Groves, Robert ; Niu, Guofu ; Zhang, Shiming ; Jin, Zhenrong ; Marshall, Cheryl J. ; Marshall, Paul W. ; Kim, Hak S. ; Reed, Robert A. ; Palmer, Michael J. ; Joseph, Al
Author_Institution :
Electr. & Comput. Eng. Dept., Auburn Univ., AL, USA
fDate :
12/1/2001 12:00:00 AM
Abstract :
Presents the first experimental results of the effects of 63 MeV proton irradiation on SiGe heterojunction bipolar transistor (HBT) analog and radio-frequency (RF) circuits and passive elements. A SiGe HBT bandgap, reference circuit, commonly used to generate stable on-chip voltages in analog ICs, a SiGe HBT voltage-controlled oscillator, a key building block for RF transceivers, and an LC bandpass filter routinely used in RF circuit design were each irradiated to proton fluences as high as 5×1013 p/cm2. The degradation associated with these extreme proton fluences was found to be minimal, suggesting that SiGe HBT technology is robust for these types of circuit applications
Keywords :
Ge-Si alloys; band-pass filters; bipolar MMIC; bipolar analogue integrated circuits; heterojunction bipolar transistors; passive filters; proton effects; reference circuits; semiconductor materials; transceivers; voltage-controlled oscillators; 63 MeV; HBT; LC bandpass filter; RF circuits; RF transceivers; SiGe; analog circuits; bandgap reference circuit; passives; proton fluences; proton radiation response; stable on-chip voltages; voltage-controlled oscillator; Band pass filters; Circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Photonic band gap; Protons; Radio frequency; Silicon germanium; Transceivers; Voltage-controlled oscillators;
Journal_Title :
Nuclear Science, IEEE Transactions on
