DocumentCode
1560504
Title
Neutron irradiation effects in high electron mobility transistors
Author
Jun, Bongim ; Subramanian, Sivaraman ; Peczalski, A.
Author_Institution
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
Volume
48
Issue
6
fYear
2001
fDate
12/1/2001 12:00:00 AM
Firstpage
2250
Lastpage
2261
Abstract
Neutron irradiation effects on the I-V characteristics of AlGaAs-GaAs high electron mobility transistors and AlGaAs-InGaAs heterostructure insulated gate field-effect transistors are studied. Physical mechanisms responsible for the observed degradation of the device parameters are discussed
Keywords
aluminium compounds; characteristics measurement; electron mobility; gallium arsenide; high electron mobility transistors; indium compounds; insulated gate field effect transistors; neutron effects; semiconductor device measurement; semiconductor device reliability; AlGaAs-GaAs; AlGaAs-InGaAs; I-V characteristics; device parameter degradation; high electron mobility transistors; insulated gate field-effect transistors; neutron irradiation effects; Degradation; Electron mobility; FETs; Gallium arsenide; HEMTs; Insulation; MODFETs; Microwave transistors; Neutrons; Threshold voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.983204
Filename
983204
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