Title :
Neutron irradiation effects in high electron mobility transistors
Author :
Jun, Bongim ; Subramanian, Sivaraman ; Peczalski, A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
fDate :
12/1/2001 12:00:00 AM
Abstract :
Neutron irradiation effects on the I-V characteristics of AlGaAs-GaAs high electron mobility transistors and AlGaAs-InGaAs heterostructure insulated gate field-effect transistors are studied. Physical mechanisms responsible for the observed degradation of the device parameters are discussed
Keywords :
aluminium compounds; characteristics measurement; electron mobility; gallium arsenide; high electron mobility transistors; indium compounds; insulated gate field effect transistors; neutron effects; semiconductor device measurement; semiconductor device reliability; AlGaAs-GaAs; AlGaAs-InGaAs; I-V characteristics; device parameter degradation; high electron mobility transistors; insulated gate field-effect transistors; neutron irradiation effects; Degradation; Electron mobility; FETs; Gallium arsenide; HEMTs; Insulation; MODFETs; Microwave transistors; Neutrons; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
