Title :
Simulation of heavy-ion-induced failure modes in nMOS cells of ICs
Author :
Loquet, Jean-Gabriel ; David, Jean-Pierre ; Duzellier, S. ; Falguère, D. ; Nuns, T.
Author_Institution :
ONERA, Toulouse, France
fDate :
12/1/2001 12:00:00 AM
Abstract :
Simulation results show leakage current induced by the impact of a single heavy ion in an nMOSFET´s bird´s beak accountable for experimentally observed stuck bits. Parametric extrapolation shows dramatic sensitivity increase for recent local oxidation of silicon technologies
Keywords :
MOS integrated circuits; MOSFET; extrapolation; failure analysis; ion beam effects; leakage currents; oxidation; LOCOS technology; Si; bird´s beak; failure mode; heavy ion irradiation; integrated circuit; leakage current; nMOS cell; nMOSFET; numerical simulation; parametric extrapolation; sensitivity; stuck bits; Extrapolation; Ionization; Leakage current; Linear particle accelerator; MOS devices; MOSFET circuits; Oxidation; Radiative recombination; Random access memory; Silicon;
Journal_Title :
Nuclear Science, IEEE Transactions on
