DocumentCode
156067
Title
Investigation of behavioral models for MMIC elements
Author
Salnikov, A.S.
Author_Institution
Tomsk State Univ. of Control Syst. & Radioelectron. (TUSUR Univ.), Tomsk, Russia
fYear
2014
fDate
7-13 Sept. 2014
Firstpage
119
Lastpage
120
Abstract
Behavioral models for MMIC elements based on three multidimensional approximation techniques, i.e., artificial neural networks (ANN), radial basis functions method, and inverse distance weighting (IDW) method, are investigated. As a test example, the parametric models for describing a frequency dependence of scattering parameters of GaAs pHEMT in different DC operating points have been constructed. It is shown that IDW model demonstrates the accuracy and calculation speed that are comparable with ANN model. However, IDW method needs much lesser time for the model building. Thus, it can be successfully used for constructing MMIC elements´ behavioral models.
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC; S-parameters; gallium arsenide; high electron mobility transistors; radial basis function networks; telecommunication computing; ANN model; GaAs; GaAs pHEMT scattering parameter frequency dependence; MMIC element; artificial neural network; behavioral model investigation; different DC operating point; inverse distance weighting method; lDW model; radial basis function method; three multidimensional approximation technique;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-966-335-412-5
Type
conf
DOI
10.1109/CRMICO.2014.6959317
Filename
6959317
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