• DocumentCode
    156067
  • Title

    Investigation of behavioral models for MMIC elements

  • Author

    Salnikov, A.S.

  • Author_Institution
    Tomsk State Univ. of Control Syst. & Radioelectron. (TUSUR Univ.), Tomsk, Russia
  • fYear
    2014
  • fDate
    7-13 Sept. 2014
  • Firstpage
    119
  • Lastpage
    120
  • Abstract
    Behavioral models for MMIC elements based on three multidimensional approximation techniques, i.e., artificial neural networks (ANN), radial basis functions method, and inverse distance weighting (IDW) method, are investigated. As a test example, the parametric models for describing a frequency dependence of scattering parameters of GaAs pHEMT in different DC operating points have been constructed. It is shown that IDW model demonstrates the accuracy and calculation speed that are comparable with ANN model. However, IDW method needs much lesser time for the model building. Thus, it can be successfully used for constructing MMIC elements´ behavioral models.
  • Keywords
    HEMT integrated circuits; III-V semiconductors; MMIC; S-parameters; gallium arsenide; high electron mobility transistors; radial basis function networks; telecommunication computing; ANN model; GaAs; GaAs pHEMT scattering parameter frequency dependence; MMIC element; artificial neural network; behavioral model investigation; different DC operating point; inverse distance weighting method; lDW model; radial basis function method; three multidimensional approximation technique;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-966-335-412-5
  • Type

    conf

  • DOI
    10.1109/CRMICO.2014.6959317
  • Filename
    6959317