Title :
Development of MIC PDK for GaAs process with 1.0-??m geometry size
Author :
Tokmakov, O.I. ; Pushnitsa, I.S. ; Chaliy, V.P.
Author_Institution :
Svetlana-Rost, JST, St. Petersburg, Russia
Abstract :
Results of development of MIC PDK for GaAs process with 1.0-μm geometry size are presented. The PDK was later used for development of IF amplifiers, microwave switches and IF transformers for frequency range up to 1.5 GHz.
Keywords :
III-V semiconductors; gallium arsenide; semiconductor technology; GaAs; IF amplifiers; IF transformers; MIC PDK development; gallium arsenide process; geometry size; microwave switches; size 1.0 mum; Logic gates;
Conference_Titel :
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-412-5
DOI :
10.1109/CRMICO.2014.6959318
