Title :
Materials for multi junction solar cell
Author :
Nishimura, Suzuka ; Terashima, Kazutaka ; Nagayoshi, Hiroshi
Author_Institution :
Keio Univ., Kanagawa, Japan
Abstract :
InGaN material systems have attracted much attention of the researchers for ultra high efficiency solar cells. We have studied to grow InGaN related materials on Si. GaN related materials have been found to be grown on Si substrates using electrically conductive BP crystals as a buffer crystal.
Keywords :
III-V semiconductors; MOCVD; boron compounds; buffer layers; elemental semiconductors; gallium compounds; indium compounds; semiconductor growth; semiconductor heterojunctions; silicon; solar cells; vapour phase epitaxial growth; GaN-BP-Si; InGaN material system; Si; buffer crystal; electrically conductive BP crystals; multijunction solar cell; ultra high efficiency solar cells; Conducting materials; Crystalline materials; Crystals; Epitaxial growth; Gallium nitride; Lattices; Photonic band gap; Photovoltaic cells; Pollution measurement; Substrates;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488234
