InGaP/InGaAs/Ge high concentration solar cell development at Emcore

Author

Stan, M.A. ; Aiken, D.J. ; Sharps, P.R. ; Hills, J. ; Doman, J.

Author_Institution

Emcore Photovoltaics, Albuquerque, NM, USA

fYear

2005

Firstpage

770

Lastpage

773

Abstract

Results from the Emcore triple junction (3J) terrestrial concentrator cell development program are presented. The cell is intended for use at concentrations equal to or exceeding 500× geometrical. Leveraging our 3J space cell we have redesigned the emitter/grid structure, the tunnel diode interconnects, and top cell base thickness for use under concentrated terrestrial illumination. We have achieved a conversion efficiency of 32.8% (low AOD spectrum) at 165×. Methods for achieving still higher efficiencies are discussed, including the development of a metamorphic 3J cell. We have grown and characterized InGaAs metamorphic materials on Ge to be used as virtual substrates in a metamorphic 3J cell. The metamorphic InGaAs material has photoluminescence decay times characteristic of nearly radiatively limited material.

Keywords

III-V semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; interconnections; photoluminescence; semiconductor heterojunctions; semiconductor thin films; solar cells; substrates; tunnel diodes; 32.8 percent; AOD spectrum; Emcore triple junction terrestrial concentrator cell development program; InGaAs metamorphic materials; InGaP-InGaAs-Ge; InGaP/InGaAs/Ge high concentration solar cell; concentrated terrestrial illumination; conversion efficiency; emitter/grid structure; metamorphic 3J cell; nearly radiatively limited material; photoluminescence decay time; space cell; top cell base thickness; tunnel diode interconnects; virtual substrates; Costs; Current density; Indium gallium arsenide; Lighting; Optical receivers; Performance evaluation; Photovoltaic cells; Semiconductor diodes; Space technology; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE

ISSN

0160-8371

Print_ISBN

0-7803-8707-4

Type

conf

DOI

10.1109/PVSC.2005.1488246

Filename

1488246