Title :
High frequency mismatch characterization on 170GHz HBT NPN bipolar device
Author :
Perrotin, André ; Gloria, Daniel ; Danaie, Stéphane ; Pourchon, Franck ; Laurens, Michel
Author_Institution :
Central R&D, ST Microelectron., Crolles, France
Abstract :
This paper describes a high frequency mismatch approach on BJT able to reach Ft=170GHz. All obtained results are complementary and all well linked with the mismatch extract from DC measurement and in good agreement with the model parameters. In order to extract these results, a new test structure and associated parameter extraction tool have been developed.
Keywords :
heterojunction bipolar transistors; microwave transistors; semiconductor device measurement; 170 GHz; DC measurement; HBT NPN bipolar device; bipolar junction transistors; heterojunction bipolar transistors; high frequency mismatch characterization; parameter extraction tool; Capacitance measurement; Electrical resistance measurement; Frequency; Heterojunction bipolar transistors; Microelectronics; Parameter extraction; Performance evaluation; Research and development; Testing; Time of arrival estimation;
Conference_Titel :
Microelectronic Test Structures, 2006. ICMTS 2006. IEEE International Conference on
Print_ISBN :
1-4244-0167-4
DOI :
10.1109/ICMTS.2006.1614297
