Test structure design for measuring electron and hole mobilities at very high injection levels

In this paper is presented a new test structure designed to overcome the limitations of an existing measurement method of the carrier-carrier scattering mobility. The proposed test device allows very accurate control of carrier concentrations without limitations on the test structure geometries. Comparisons of simulations with a well known analytical mobility model show the good accuracy of the proposed test structure in measuring electron and hole mobilities till to very high injection levels. First experimental results of the technique are presented.