Dielectric relaxation characterization and modeling in large frequency and temperature domain: application to 5fF/μm2 Ta2O5 MIM capacitor

This paper deals with 5fF/μm² Ta₂O₅ MIM (metal-insulator-metal) dielectric relaxation characterization and modeling. The Dow model based on RC poles is reviewed in particular to introduce temperature behavior. An optimized test chip that can be accurately simulated allows us to properly measure memory effect. This enables to obtained dielectric relaxation model over 5 time decades and the whole temperature and voltage operation range. The good agreement of this model with MIM capacitance versus frequency measurements validates this approach.